Stress Hysteresis in vacuum or gas up to 900C for the study of annealing cycles. Thermal Desorption, Film Shrinkage, Reflectivity, and Resistivity options provide additional insight to causes of material changes with temperature. NEW: Optional wafer rotation offers unique 2D/3D mapping to study wafer deformation as a function of temperature.
Room Unit 605-607, Build 2, Xinglian Building,
No.1535 Hongmei Road, Xuhui District, Shanghai
|TEL: 021-5383 8811
FAX: 021-3367 8466