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The scia Cube 300/750 are designed for large area high density plasma processes of substrates up to 300 mm x 200 mm (scia Coat 300) and up to 750 mm x 750 mm (scia Coat 750). Typical applications are deposition of Diamond Like Carbon (DLC) for optical filters and dielectric films for anti-reflective coatings as well as etching processes with oxygen or halogen chemistry for the structuring of Semiconductors and metals.

The scia Cube 300/750 combine plasma excitation by an array of microwave sources. The substrate stage is equipped with an independent a RF bias. Various substrate sizes can be transferred with an automatic vacuum load-lock system.

  • Semiconductor, Solar & Electronics

Technical Data

scia Cube 300 scia Cube 750
Substrate size Up to 300 mm x 200 mm Up to 750 mm x 750 mm
Substrate holder Water cooled, RF bias Water cooled, RF bias
Substrate temperature Alternatively cryo cooling down to -10°C or heating up to max. 700°C Alternatively cryo cooling down to -10°C or heating up to max. 850°C
Plasma source Linear microwave ECR-source PL400 and/or RF parallel plate Linear microwave ECR-source PL1300 and/or RF parallel plate arrangement
Power supply MW-Power: max. 9000 W
RF-Power:max. 600 W
MW-Power: max. 48 kW, RF-Power: max. 3 kW
Base Pressure < 1 x 10-6 mbar < 1 x 10-6 mbar
System dimensions (W x D x H) 1.90 m x 1.30 m x 2.20 m (without electrical rack and pumps) 3.70 m x 3.40 m x 2.20 m (without electrical rack, pumps and loading system)
Tool configurations 1 process chamber, 1 load-lock 1 process chamber, 1 loading system, 1 load-lock
Software interface SECS II / GEM SECS II / GEM
Scia SystemsManufacturer of advanced ion beam and plasma processing systems, scia Systems established itself in a very short time on the worldwide market. Products are dedicated to the industry of Microelectronics, MEMS and precision optical manufacturing : etching, trimming, sputtering systems.
[Sscia systems, scia Cube 300, scia Cube 750, etching and coating, deposition, PECVD]