Merci de laisser un message
The scia Cube 300/750 are designed for large area high density plasma processes of substrates up to 300 mm x 200 mm (scia Coat 300) and up to 750 mm x 750 mm (scia Coat 750). Typical applications are deposition of Diamond Like Carbon (DLC) for optical filters and dielectric films for anti-reflective coatings as well as etching processes with oxygen or halogen chemistry for the structuring of Semiconductors and metals.
The scia Cube 300/750 combine plasma excitation by an array of microwave sources. The substrate stage is equipped with an independent a RF bias. Various substrate sizes can be transferred with an automatic vacuum load-lock system.
|scia Cube 300||scia Cube 750|
|Substrate size||Up to 300 mm x 200 mm||Up to 750 mm x 750 mm|
|Substrate holder||Water cooled, RF bias||Water cooled, RF bias|
|Substrate temperature||Alternatively cryo cooling down to -10°C or heating up to max. 700°C||Alternatively cryo cooling down to -10°C or heating up to max. 850°C|
|Plasma source||Linear microwave ECR-source PL400 and/or RF parallel plate||Linear microwave ECR-source PL1300 and/or RF parallel plate arrangement|
|Power supply||MW-Power: max. 9000 W
RF-Power:max. 600 W
|MW-Power: max. 48 kW, RF-Power: max. 3 kW|
|Base Pressure||< 1 x 10-6 mbar||< 1 x 10-6 mbar|
|System dimensions (W x D x H)||1.90 m x 1.30 m x 2.20 m (without electrical rack and pumps)||3.70 m x 3.40 m x 2.20 m (without electrical rack, pumps and loading system)|
|Tool configurations||1 process chamber, 1 load-lock||1 process chamber, 1 loading system, 1 load-lock|
|Software interface||SECS II / GEM||SECS II / GEM|