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The scia Trim 200 is designed for high precision film thickness trimming in wafer processing. Typical applications of the system are frequency and thickness trimming in manufacturing of acousto-electrical devices and filters such as bulk acoustic wave (BAW) or surface acoustic wave (SAW) devices, localized pole trimming for thin film heads (TFH) and trimming of precision thin film resistors.
The scia Trim 200 is a high volume production system and accommodates a standard semiconductor cassette handling robot. Cluster tools with two process chambers and two cassette load-locks are available.
|Substrate diameter||Up to 200 mm|
|Substrate Holder||Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 170° in 0.1° steps|
|Ion Beam Source||Circular RF ion beam source RF350‑e|
|Neutralizer||Plasma bridge neutralizer N‑RF|
|Typical removal rates||SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min|
|Uniformity variation||≤ 2.0 %|
|Base pressure||< 1 x 10-6 mbar|
|System dimensions (W x D x H)||2.70 m x 1.50 m x 2.40 m (without electrical rack and pumps)|
|Tool configurations||Single wafer load-lock, Cluster system with cassette handling|
|Software interfaces||SECS II / GEM|